IRFH5306TRPBF

new-10%

Manufacturer part number:IRFH5306TRPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 15A 5X6 PQFN

Case Package:SOT-23

Datasheet:IRFH5306TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	8.1MOhm
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
JESD-30 Code	R-PDSO-N5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3.6W Ta 26W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.6W
Case Connection	DRAIN
Turn On Delay Time	9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.1m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	1125pF @ 15V
Current - Continuous Drain (Id) @ 25°C	15A Ta 44A Tc
Gate Charge (Qg) (Max) @ Vgs	12nC @ 4.5V
Rise Time	26ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	6.1 ns
Turn-Off Delay Time	9.1 ns
Continuous Drain Current (ID)	44A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	60A
Avalanche Energy Rating (Eas)	46 mJ
Height	838.2μm
Length	5.9944mm
Width	5mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free