IXFN23N100

new-10%

Manufacturer part number:IXFN23N100

Manufacturer:IXYS

Description:MOSFET N-CH 1000V 23A SOT-227B

Case Package:SOT-23

Datasheet:IXFN23N100 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2005
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Terminal Finish	Nickel (Ni)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	600W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	568W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Vgs(th) (Max) @ Id	5V @ 8mA
Current - Continuous Drain (Id) @ 25°C	23A Tc
Rise Time	35ns
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	21 ns
Turn-Off Delay Time	75 ns
Continuous Drain Current (ID)	23A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	1kV
Pulsed Drain Current-Max (IDM)	92A
Avalanche Energy Rating (Eas)	3000 mJ
Drain to Source Resistance	390mOhm
RoHS Status	ROHS3 Compliant