BSS123NH6327XTSA1

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BSS123NH6327XTSA1

Manufacturer part number:BSS123NH6327XTSA1

Manufacturer:Infineon Technologies

Description:BSS123NH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:BSS123NH6327XTSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2012
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOGIC LEVEL COMPATIBLE
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	500mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	500mW
Turn On Delay Time	2.3 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	6 Ω @ 190mA, 10V
Vgs(th) (Max) @ Id	1.8V @ 13μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	20.9pF @ 25V
Current - Continuous Drain (Id) @ 25°C	190mA Ta
Gate Charge (Qg) (Max) @ Vgs	0.9nC @ 10V
Rise Time	3.2ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	22 ns
Turn-Off Delay Time	7.4 ns
Continuous Drain Current (ID)	190mA
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	100V
Drain-source On Resistance-Max	6Ohm
Drain to Source Breakdown Voltage	100V
Max Junction Temperature (Tj)	150°C
Height	1.1mm
Length	2.9mm
Width	1.3mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free