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BSS127 E6327

BSS127 E6327

BSS127 E6327

Infineon Technologies

MOSFET N-CH 600V 0.021A SOT-23

SOT-23

BSS127 E6327 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series SIPMOS®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
HTS Code 8541.21.00.95
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 500mW Ta
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 500 Ω @ 16mA, 10V
Vgs(th) (Max) @ Id 2.6V @ 8μA
Input Capacitance (Ciss) (Max) @ Vds 28pF @ 25V
Current - Continuous Drain (Id) @ 25°C 21mA Ta
Gate Charge (Qg) (Max) @ Vgs 1nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 0.021A
Drain-source On Resistance-Max 600Ohm
DS Breakdown Voltage-Min 600V
Feedback Cap-Max (Crss) 1.5 pF
RoHS Status RoHS Compliant

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