BSS138WH6327XTSA1

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BSS138WH6327XTSA1

Manufacturer part number:BSS138WH6327XTSA1

Manufacturer:Infineon Technologies

Description:BSS138WH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:BSS138WH6327XTSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Number of Pins	3
Weight	124.596154mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2002
Series	SIPMOS®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Number of Elements	1
Number of Channels	1
Voltage	50V
Power Dissipation-Max	500mW Ta
Element Configuration	Single
Current	2A
Operating Mode	ENHANCEMENT MODE
Power Dissipation	500mW
Turn On Delay Time	2.2 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3.5 Ω @ 200mA, 10V
Vgs(th) (Max) @ Id	1.4V @ 26μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	43pF @ 25V
Current - Continuous Drain (Id) @ 25°C	280mA Ta
Gate Charge (Qg) (Max) @ Vgs	1.5nC @ 10V
Rise Time	3ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	8.2 ns
Turn-Off Delay Time	6.7 ns
Continuous Drain Current (ID)	280mA
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	60V
Drain to Source Breakdown Voltage	60V
Feedback Cap-Max (Crss)	4.2 pF
Height	1mm
Length	2mm
Width	1.25mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free