BSS670S2L

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BSS670S2L

Manufacturer part number:BSS670S2L

Manufacturer:Infineon Technologies

Description:BSS670S2L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:BSS670S2L Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2003
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOGIC LEVEL COMPATIBLE
HTS Code	8541.21.00.95
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PDSO-G3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	360mW Ta
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	650m Ω @ 270mA, 10V
Vgs(th) (Max) @ Id	2V @ 2.7μA
Input Capacitance (Ciss) (Max) @ Vds	75pF @ 25V
Current - Continuous Drain (Id) @ 25°C	540mA Ta
Gate Charge (Qg) (Max) @ Vgs	2.26nC @ 10V
Drain to Source Voltage (Vdss)	55V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	0.54A
Drain-source On Resistance-Max	0.825Ohm
DS Breakdown Voltage-Min	55V
Feedback Cap-Max (Crss)	10 pF
RoHS Status	RoHS Compliant