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TPC8A05-H(TE12L,QM

TPC8A05-H(TE12L,QM

TPC8A05-H(TE12L,QM

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 10A 8SOP

SOT-23

TPC8A05-H(TE12L,QM Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.173, 4.40mm Width)
Number of Pins 8
Supplier Device Package 8-SOP (5.5x6.0)
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series U-MOSV-H
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 13.3mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2.3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 10V
Current - Continuous Drain (Id) @ 25°C 10A Ta
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Rise Time 2ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2.5 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 1.7nF
FET Feature Schottky Diode (Body)
Rds On Max 13.3 mΩ
Radiation Hardening No
RoHS Status RoHS Compliant

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