SI2331DS-T1-GE3

new-10%

Manufacturer part number:SI2331DS-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 12V 3.2A SOT23-3

Case Package:SOT-23

Datasheet:SI2331DS-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3 (TO-236)
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	48mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	710mW Ta
Element Configuration	Single
Power Dissipation	710mW
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	48mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	780pF @ 6V
Current - Continuous Drain (Id) @ 25°C	3.2A Ta
Gate Charge (Qg) (Max) @ Vgs	14nC @ 4.5V
Drain to Source Voltage (Vdss)	12V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Turn-Off Delay Time	65 ns
Continuous Drain Current (ID)	3.2A
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	20V
Input Capacitance	780pF
Drain to Source Resistance	48mOhm
Rds On Max	48 mΩ
RoHS Status	ROHS3 Compliant