BSS806NEH6327XTSA1

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BSS806NEH6327XTSA1

Manufacturer part number:BSS806NEH6327XTSA1

Manufacturer:Infineon Technologies

Description:BSS806NEH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:BSS806NEH6327XTSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	1.437803g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	Automotive, AEC-Q101, HEXFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Power Dissipation-Max	500mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	500mW
Turn On Delay Time	7.5 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	57m Ω @ 2.3A, 2.5V
Vgs(th) (Max) @ Id	0.75V @ 11μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	529pF @ 10V
Current - Continuous Drain (Id) @ 25°C	2.3A Ta
Gate Charge (Qg) (Max) @ Vgs	1.7nC @ 2.5V
Rise Time	9.9ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 2.5V
Vgs (Max)	±8V
Fall Time (Typ)	3.7 ns
Turn-Off Delay Time	12 ns
Continuous Drain Current (ID)	2.3A
Gate to Source Voltage (Vgs)	8V
Max Dual Supply Voltage	20V
Drain-source On Resistance-Max	0.057Ohm
Feedback Cap-Max (Crss)	29 pF
Height	1mm
Length	2.9mm
Width	1.3mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free