IXTH15N50L2 Overview

This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 750 mJ.The maximum input capacitance of this device is 4080pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 15A.This transistor's threshold voltage is 2.5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTH15N50L2 Features

the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 15A
a threshold voltage of 2.5V
a 500V drain to source voltage (Vdss)

IXTH15N50L2 Applications

There are a lot of IXYS
IXTH15N50L2 applications of single MOSFETs transistors.

• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,