IPP120N06S4H1AKSA2

new-10%

Manufacturer part number:IPP120N06S4H1AKSA2

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 60V 120A TO220-3

Case Package:SOT-23

Datasheet:IPP120N06S4H1AKSA2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	6.000006g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2009
Series	Automotive, AEC-Q101, OptiMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	250W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	30 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2.4m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds	21900pF @ 25V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	270nC @ 10V
Rise Time	5ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	60 ns
Continuous Drain Current (ID)	120A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	60V
Drain-source On Resistance-Max	0.0024Ohm
Pulsed Drain Current-Max (IDM)	480A
RoHS Status	ROHS3 Compliant