BSS84PWH6327XTSA1

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BSS84PWH6327XTSA1

Manufacturer part number:BSS84PWH6327XTSA1

Manufacturer:Infineon Technologies

Description:BSS84PWH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:BSS84PWH6327XTSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2000
Series	SIPMOS®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Voltage - Rated DC	-60V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	-150mA
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	300mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300mW
Turn On Delay Time	6.7 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	8 Ω @ 150mA, 10V
Vgs(th) (Max) @ Id	2V @ 20μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	19.1pF @ 25V
Current - Continuous Drain (Id) @ 25°C	150mA Ta
Gate Charge (Qg) (Max) @ Vgs	1.5nC @ 10V
Rise Time	16.2ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	20.5 ns
Turn-Off Delay Time	8.6 ns
Continuous Drain Current (ID)	-150mA
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	-60V
Drain-source On Resistance-Max	8Ohm
Drain to Source Breakdown Voltage	-60V
Max Junction Temperature (Tj)	150°C
Height	1mm
Length	2mm
Width	1.25mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free