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BSZ018N04LS6ATMA1

  • BSZ018N04LS6ATMA1
  • BSZ018N04LS6ATMA1

BSZ018N04LS6ATMA1

BSZ018N04LS6ATMA1

Infineon Technologies

BSZ018N04LS6ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

BSZ018N04LS6ATMA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Operating Temperature -55°C~175°C TJ
Series OptiMOS™ 6
Part Status Active
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Ta 83W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.8m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 20V
Current - Continuous Drain (Id) @ 25°C 27A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.66000 $2.66
500 $2.6334 $1316.7
1000 $2.6068 $2606.8
1500 $2.5802 $3870.3
2000 $2.5536 $5107.2
2500 $2.527 $6317.5
BSZ018N04LS6ATMA1 Product Details

BSZ018N04LS6ATMA1 Description


BSZ018N04LS6ATMA1 belongs to the family of OptiMOS? N-channel power transistors provided by Infineon Technologies and optimized for synchronous rectification. On the basis of the unique OptiMOS? technology, it can be used for various applications, including microcontrollers and microprocessors, as well as digital circuits and analog circuits.



BSZ018N04LS6ATMA1 Features


  • Superior thermal resistance

  • Available in the TSDSON-8FL package

  • Optimized for synchronous rectification 

  • 100% avalanche tested



BSZ018N04LS6ATMA1 Applications


  • Microcontrollers and microprocessors

  • Digital circuits and analog circuits


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