HUF75229P3

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Manufacturer part number:HUF75229P3

Manufacturer:ON Semiconductor

Description:HUF75229P3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:HUF75229P3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220-3
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2002
Series	UltraFET™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	90W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	22mOhm @ 44A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1060pF @ 25V
Current - Continuous Drain (Id) @ 25°C	44A Tc
Gate Charge (Qg) (Max) @ Vgs	75nC @ 20V
Drain to Source Voltage (Vdss)	50V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V

Quantity	Unit Price	Ext. Price
1	$4.146222	$4.146222
10	$3.911530	$39.1153
100	$3.690123	$369.0123
500	$3.481248	$1740.624
1000	$3.284196	$3284.196

HUF75229P3 Description

This N-channel power MOSFET uses an innovative UltraFET process. This is an advanced process technology that achieves the lowest possible on-resistance per silicon area, resulting in excellent performance. The device can withstand high-energy modes in avalanches and diodes show very low reverse recovery time and store charging. It is designed for important efficiency applications such as switching regulators, switch converters, motor drivers, relay drivers, low-voltage portable and battery-powered products in voltage bus switches and power management.