BSZ035N03MSGATMA1

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Manufacturer part number:BSZ035N03MSGATMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 30V 18A 8-Pin TSDSON EP

Case Package:SOT-23

Datasheet:BSZ035N03MSGATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2003
Series	OptiMOS™
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	8
JESD-30 Code	R-PDSO-C5
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.1W Ta 69W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.1W
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5700pF @ 15V
Current - Continuous Drain (Id) @ 25°C	18A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs	74nC @ 10V
Rise Time	5.8ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	4.8 ns
Turn-Off Delay Time	38 ns
Continuous Drain Current (ID)	18A
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0043Ohm
DS Breakdown Voltage-Min	30V
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant