FDB082N15A Description
This N-Channel MOSFET is made utilizing the cutting-edge PowerTrench? process from Fairchild Semiconductor, which has been designed to reduce the on-state resistance while maintaining excellent switching performance. These devices are made to offer a high level of dv/dt capability for the most demanding applications in addition to a significant reduction in on-resistance.
FDB082N15A Features
?Ros(on)=6.7 mQ @ VGS = 10 V, lD = 75 A
? Quick Switching
?Low Gate Charge, 64.5 nC for QG (Typ.)
?Extremely Low Ros with High Performance Trench Technology (on)
?Exceptional Ability to Handle High Power and Current
? RoHS conformant
FDB082N15A Applications
?ATX/Server/Telecom PSU Synchronous Rectification
?Circuit for battery protection
?Uninterruptible Power Supplies and motor drives
?Miniature Solar Inverter
