SCT10N120AG

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Manufacturer part number:SCT10N120AG

Manufacturer:STMicroelectronics

Description:SCT10N120AG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:SCT10N120AG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-247-3
Operating Temperature	-55°C~200°C TJ
Series	Automotive, AEC-Q101
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	SiCFET (Silicon Carbide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Power Dissipation-Max	150W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	690m Ω @ 6A, 20V
Vgs(th) (Max) @ Id	3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	290pF @ 400V
Current - Continuous Drain (Id) @ 25°C	12A Tc
Gate Charge (Qg) (Max) @ Vgs	22nC @ 20V
Drain to Source Voltage (Vdss)	1200V
Drive Voltage (Max Rds On,Min Rds On)	20V
Vgs (Max)	+25V, -10V
RoHS Status	RoHS Compliant

Quantity	Unit Price	Ext. Price
1	$12.58000	$12.58
500	$12.4542	$6227.1
1000	$12.3284	$12328.4
1500	$12.2026	$18303.9
2000	$12.0768	$24153.6
2500	$11.951	$29877.5

SCT10N120AG Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industrystandard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.