BSZ042N04NSGATMA1

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BSZ042N04NSGATMA1

Manufacturer part number:BSZ042N04NSGATMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 40V 40A TSDSON-8

Case Package:SOT-23

Datasheet:BSZ042N04NSGATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2003
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED, HIGH VOLTAGE
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	8
JESD-30 Code	R-PDSO-N5
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.1W Ta 69W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	69W
Case Connection	DRAIN
Turn On Delay Time	14 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.2m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	4V @ 36μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	3700pF @ 20V
Current - Continuous Drain (Id) @ 25°C	40A Tc
Gate Charge (Qg) (Max) @ Vgs	46nC @ 10V
Rise Time	3.4ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	4.2 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	40A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	40V
Drain-source On Resistance-Max	0.0042Ohm
Pulsed Drain Current-Max (IDM)	160A
Avalanche Energy Rating (Eas)	150 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead