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SSM3K35MFV,L3F

SSM3K35MFV,L3F

SSM3K35MFV,L3F

Toshiba Semiconductor and Storage

Trans MOSFET N-CH 20V 0.18A 3-Pin VESM Embossed T/R

SOT-23

SSM3K35MFV,L3F Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-723
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
Power Dissipation-Max 150mW Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 115 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3 Ω @ 50mA, 4V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 9.5pF @ 3V
Current - Continuous Drain (Id) @ 25°C 180mA Ta
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4V
Vgs (Max) ±10V
Turn-Off Delay Time 300 ns
Continuous Drain Current (ID) 180mA
Gate to Source Voltage (Vgs) 10V
Drain Current-Max (Abs) (ID) 0.18A
Drain-source On Resistance-Max 4Ohm
DS Breakdown Voltage-Min 20V
Radiation Hardening No
RoHS Status RoHS Compliant

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