BSZ0500NSIATMA1

new-10%

Manufacturer part number:BSZ0500NSIATMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 30A 8SON

Case Package:SOT-23

Datasheet:BSZ0500NSIATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	OptiMOS™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	S-PDSO-N3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.1W Ta 69W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	3400pF @ 15V
Current - Continuous Drain (Id) @ 25°C	30A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs	52nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	40A
Max Dual Supply Voltage	30V
Drain Current-Max (Abs) (ID)	30A
Drain-source On Resistance-Max	0.0019Ohm
Pulsed Drain Current-Max (IDM)	160A
Avalanche Energy Rating (Eas)	90 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead