BSZ0909NDXTMA1

new-10%

Manufacturer part number:BSZ0909NDXTMA1

Manufacturer:Infineon Technologies

Description:MOSFET 2 N-CH 30V 20A WISON-8

Case Package:SOT-23

Datasheet:BSZ0909NDXTMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	S-PDSO-N8
Number of Elements	2
Configuration	SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Power - Max	17W
FET Type	2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs	18m Ω @ 9A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	360pF @ 15V
Current - Continuous Drain (Id) @ 25°C	20A Tc
Gate Charge (Qg) (Max) @ Vgs	2.6nC @ 4.5V
Drain to Source Voltage (Vdss)	30V
Drain Current-Max (Abs) (ID)	4.1A
Drain-source On Resistance-Max	0.025Ohm
Pulsed Drain Current-Max (IDM)	40A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	4 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate, 4.5V Drive
RoHS Status	ROHS3 Compliant