BSZ097N04LSGATMA1

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BSZ097N04LSGATMA1

Manufacturer part number:BSZ097N04LSGATMA1

Manufacturer:Infineon Technologies

Description:BSZ097N04LSGATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:BSZ097N04LSGATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Additional Feature	LOGIC LEVEL COMPATIBLE
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	8
JESD-30 Code	R-PDSO-N5
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.1W Ta 35W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	35W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9.7m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2V @ 14μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	1900pF @ 20V
Current - Continuous Drain (Id) @ 25°C	12A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs	24nC @ 10V
Rise Time	2.4ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	12A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	40V
Avalanche Energy Rating (Eas)	20 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead