BSZ105N04NSGATMA1

new-10%

Manufacturer part number:BSZ105N04NSGATMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 40V 11A 8-Pin TSDSON EP

Case Package:SOT-23

Datasheet:BSZ105N04NSGATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Pin Count	8
JESD-30 Code	S-PDSO-N5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.1W Ta 35W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	35W
Case Connection	DRAIN
Turn On Delay Time	7 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	10.5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	4V @ 14μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	1300pF @ 20V
Current - Continuous Drain (Id) @ 25°C	11A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Rise Time	1.2ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	2.6 ns
Turn-Off Delay Time	9.5 ns
Continuous Drain Current (ID)	11A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	40V
Avalanche Energy Rating (Eas)	20 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead