BSZ110N08NS5ATMA1

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BSZ110N08NS5ATMA1

Manufacturer part number:BSZ110N08NS5ATMA1

Manufacturer:Infineon Technologies

Description:BSZ110N08NS5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:BSZ110N08NS5ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	OptiMOS™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	S-PDSO-N3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	50W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	11m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	3.8V @ 22μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	1300pF @ 40V
Current - Continuous Drain (Id) @ 25°C	40A Tc
Gate Charge (Qg) (Max) @ Vgs	18.5nC @ 10V
Rise Time	3ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	3 ns
Turn-Off Delay Time	15 ns
Continuous Drain Current (ID)	40A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	80V
Drain to Source Breakdown Voltage	80V
Avalanche Energy Rating (Eas)	40 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead