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SSM6J507NU,LF

SSM6J507NU,LF

SSM6J507NU,LF

Toshiba Semiconductor and Storage

MOSFET P-CH 30V 10A 6UDFN

SOT-23

SSM6J507NU,LF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series U-MOSVI
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1.25W Ta
FET Type P-Channel
Rds On (Max) @ Id, Vgs 20m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1150pF @ 15V
Current - Continuous Drain (Id) @ 25°C 10A Ta
Gate Charge (Qg) (Max) @ Vgs 20.4nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) +20V, -25V
Continuous Drain Current (ID) 10A
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.15500 $0.465
6,000 $0.14500 $0.87
15,000 $0.14000 $2.1

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