BSZ120P03NS3EGATMA1

new-10%

Manufacturer part number:BSZ120P03NS3EGATMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET P-CH 30V 40A 8-Pin TSDSON EP

Case Package:SOT-23

Datasheet:BSZ120P03NS3EGATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	ESD PROTECTED
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	8
JESD-30 Code	S-PDSO-N5
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.1W Ta 52W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	52W
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	12m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	3.1V @ 73μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	3360pF @ 15V
Current - Continuous Drain (Id) @ 25°C	11A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Rise Time	11ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±25V
Continuous Drain Current (ID)	40A
Gate to Source Voltage (Vgs)	25V
Max Dual Supply Voltage	-30V
Drain-source On Resistance-Max	0.02Ohm
Avalanche Energy Rating (Eas)	73 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead