SI4406DY-T1-GE3

new-10%

Manufacturer part number:SI4406DY-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 13A 8-SOIC

Case Package:SOT-23

Datasheet:SI4406DY-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Supplier Device Package	8-SO
Weight	186.993455mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	1.6W Ta
Element Configuration	Single
Turn On Delay Time	21 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Current - Continuous Drain (Id) @ 25°C	13A Ta
Gate Charge (Qg) (Max) @ Vgs	50nC @ 4.5V
Rise Time	15ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	100 ns
Continuous Drain Current (ID)	13A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Drain to Source Resistance	4.5mOhm
Rds On Max	4.5 mΩ
Height	3.18mm
Length	4.88mm
Width	3.91mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant