SI8404DB-T1-E1

new-10%

Manufacturer part number:SI8404DB-T1-E1

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 8V 12.2A 2X2 4-MFP

Case Package:SOT-23

Datasheet:SI8404DB-T1-E1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	4-XFBGA, CSPBGA
Number of Pins	4
Supplier Device Package	4-Microfoot
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2.78W Ta 6.25W Tc
Element Configuration	Single
Power Dissipation	2.78W
Turn On Delay Time	8 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	31mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1950pF @ 4V
Current - Continuous Drain (Id) @ 25°C	12.2A Tc
Gate Charge (Qg) (Max) @ Vgs	33nC @ 5V
Rise Time	12ns
Drain to Source Voltage (Vdss)	8V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±5V
Fall Time (Typ)	40 ns
Turn-Off Delay Time	110 ns
Continuous Drain Current (ID)	8.1A
Gate to Source Voltage (Vgs)	5V
Drain to Source Breakdown Voltage	8V
Input Capacitance	1.95nF
Drain to Source Resistance	31mOhm
Rds On Max	31 mΩ
Height	360μm
Length	1.6mm
Width	1.6mm
RoHS Status	ROHS3 Compliant