BSZ130N03LSGATMA1

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Manufacturer part number:BSZ130N03LSGATMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 30V 35A 8-Pin TSDSON

Case Package:SOT-23

Datasheet:BSZ130N03LSGATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Reach Compliance Code	not_compliant
Pin Count	8
JESD-30 Code	S-PDSO-N5
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.1W Ta 25W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	25W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	13m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	970pF @ 15V
Current - Continuous Drain (Id) @ 25°C	10A Ta 35A Tc
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Rise Time	2.6ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	35A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	30V
Drain-source On Resistance-Max	0.013Ohm
Pulsed Drain Current-Max (IDM)	140A
Avalanche Energy Rating (Eas)	9 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead