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STW23N85K5

STW23N85K5

STW23N85K5

STMicroelectronics

MOSFET (Metal Oxide) N-Channel Tube 275m Ω @ 9.5A, 10V ±30V 1650pF @ 100V 38nC @ 10V TO-247-3

SOT-23

STW23N85K5 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 17 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Operating Temperature 150°C TJ
Packaging Tube
Series SuperMESH5™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STW23N
Number of Channels 1
Power Dissipation-Max 250W Tc
Element Configuration Single
Turn On Delay Time 22 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 275m Ω @ 9.5A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1650pF @ 100V
Current - Continuous Drain (Id) @ 25°C 19A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time 14ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 19A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 850V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $7.33000 $7.33
30 $5.89067 $176.7201
120 $5.36692 $644.0304
510 $4.34588 $2216.3988
1,020 $3.66520 $3.6652
2,520 $3.48194 $6.96388
STW23N85K5 Product Details

STW23N85K5 Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1650pF @ 100V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 19A.With a drain-source breakdown voltage of 850V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 850V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 55 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 22 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.

STW23N85K5 Features


a continuous drain current (ID) of 19A
a drain-to-source breakdown voltage of 850V voltage
the turn-off delay time is 55 ns


STW23N85K5 Applications


There are a lot of STMicroelectronics
STW23N85K5 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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