STS8DN6LF6AG

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STS8DN6LF6AG

Manufacturer part number:STS8DN6LF6AG

Manufacturer:STMicroelectronics

Description:STS8DN6LF6AG datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STS8DN6LF6AG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101, STripFET™ F6
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STS8DN
JESD-30 Code	R-PDSO-G8
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Power - Max	3.2W
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	24m Ω @ 4A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1340pF @ 25V
Current - Continuous Drain (Id) @ 25°C	8A Ta
Gate Charge (Qg) (Max) @ Vgs	27nC @ 10V
Drain to Source Voltage (Vdss)	60V
Drain Current-Max (Abs) (ID)	8A
Drain-source On Resistance-Max	0.026Ohm
Pulsed Drain Current-Max (IDM)	32A
DS Breakdown Voltage-Min	60V
Avalanche Energy Rating (Eas)	72 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)	3.2W
FET Feature	Logic Level Gate
RoHS Status	ROHS3 Compliant