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FD200R12KE3HOSA1

FD200R12KE3HOSA1

FD200R12KE3HOSA1

Infineon Technologies

FD200R12KE3HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FD200R12KE3HOSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~125°C
Published 2012
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 5
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 5
JESD-30 Code R-XUFM-X5
Number of Elements 1
Configuration Single Chopper
Case Connection ISOLATED
Power - Max 1050W
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 400 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 200A
Turn Off Time-Nom (toff) 830 ns
IGBT Type Trench Field Stop
NTC Thermistor No
Input Capacitance (Cies) @ Vce 14nF @ 25V
RoHS Status Non-RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
10 $94.13800 $941.38
FD200R12KE3HOSA1 Product Details


FD200R12KE3HOSA1                           Description


IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.

 

FD200R12KE3HOSA1                           Applications

·High Power Converters

·Motor Drives

·UPS Systems

 

FD200R12KE3HOSA1                           Features

? Half-bridge

? Including fast free-wheeling diodes

? Package with insulated metal base plate

? RG on,min = 27 Ohm

 


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