FD200R12PT4B6BOSA1 Description

FD200R12PT4B6BOSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. FD200R12PT4B6BOSA1 operates between -40°C~150°C TJ, and its Max Collector Current is 300A. The FD200R12PT4B6BOSA1 has 3 pins and it is available in Module packaging way. FD200R12PT4B6BOSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.

FD200R12PT4B6BOSA1 Features

• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A

• Voltage - Collector Emitter Breakdown (Max): 1200V

• Input Capacitance (Cies) @ Vce: 12.5nF @ 25V

• Current - Collector (Ic) (Max): 300A

• Current - Collector Cutoff (Max): 15μA

FD200R12PT4B6BOSA1 Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial