FD400R33KF2CKNOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FD400R33KF2CKNOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Number of Pins
130
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Published
2015
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
7
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-XUFM-X7
Number of Elements
1
Configuration
Single Chopper
Case Connection
ISOLATED
Power - Max
4800W
Transistor Application
POWER CONTROL
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
3.3kV
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
3300V
Current - Collector (Ic) (Max)
660A
Turn On Time
480 ns
Vce(on) (Max) @ Vge, Ic
4.25V @ 15V, 400A
Turn Off Time-Nom (toff)
1900 ns
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
50nF @ 25V
RoHS Status
RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1,516.431333
$1
10
$1,466.568020
$10
25
$1,456.373406
$25
50
$1,446.249659
$50
100
$1,416.503094
$100
500
$1,315.230356
$500
FD400R33KF2CKNOSA1 Product Details
FD400R33KF2CKNOSA1 Description
IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.