FF150R12KT3GHOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FF150R12KT3GHOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Published
2002
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
7
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
7
JESD-30 Code
R-XUFM-X7
Number of Elements
2
Configuration
Single Chopper
Element Configuration
Dual
Case Connection
ISOLATED
Power - Max
780W
Transistor Application
POWER CONTROL
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
225A
Turn On Time
215 ns
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 150A
Turn Off Time-Nom (toff)
680 ns
IGBT Type
Trench Field Stop
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
11nF @ 25V
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$38.924701
$38.924701
10
$36.721415
$367.21415
100
$34.642845
$3464.2845
500
$32.681929
$16340.9645
1000
$30.832009
$30832.009
FF150R12KT3GHOSA1 Product Details
FF150R12KT3GHOSA1 Description
FF150R12KT3GHOSA1 62mm C-series module with the fast trench/fieldstop IGBT3 and emitter-controlled high-efficiency diode. It is able to deliver low switching losses and low VCEsat. It is the core device for energy conversion and transmission, commonly known as the "CPU" of power electronic devices. Based on its specific characteristics, the DF150R12RT4HOSA1 IGBT module provides optimum performance for motor drives, high-frequency switching applications, and UPS systems.