FD400R07PE4RB6BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FD400R07PE4RB6BOSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Operating Temperature
-40°C~150°C
Published
2002
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Configuration
Three Phase Inverter
Power - Max
1150W
Halogen Free
Not Halogen Free
Input
Standard
Current - Collector Cutoff (Max)
20μA
Voltage - Collector Emitter Breakdown (Max)
650V
Current - Collector (Ic) (Max)
460A
Vce(on) (Max) @ Vge, Ic
1.95V @ 15V, 400A
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
18.5nF @ 25V
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$206.934548
$206.934548
10
$200.130124
$2001.30124
25
$198.738951
$4968.473775
50
$197.357449
$9867.87245
100
$193.298187
$19329.8187
500
$179.478354
$89739.177
FD400R07PE4RB6BOSA1 Product Details
FD400R07PE4RB6BOSA1 Description
FD400R07PE4RB6BOSA1 developed by Infineon Technologies belongs to the family of EconoPACK?4 modules with trench/fieldstop IGBT 4 and emitter-controlled 4 diodes and NTC. It is a bipolar device with a MOS structure, which belongs to a power device with high-speed performance of power MOSFET and low-resistance performance of bipolar. It combines the advantages of a power transistor (Giant Transistor-GTR) and a power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications.