FD450R12KE4PHOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
FD450R12KE4PHOSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Operating Temperature
-40°C~150°C
Series
C
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Configuration
Single Chopper
Input
Standard
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
450A
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 450A
IGBT Type
Trench Field Stop
NTC Thermistor
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$229.04000
$229.04
500
$226.7496
$113374.8
1000
$224.4592
$224459.2
1500
$222.1688
$333253.2
2000
$219.8784
$439756.8
2500
$217.588
$543970
FD450R12KE4PHOSA1 Product Details
FD450R12KE4PHOSA1 Description
FD450R12KE4PHOSA1 IGBT module developed by Infineon Technologies is a modular semiconductor product which is packaged by IGBT (insulated gate bipolar transistor chip) and FWD (freewheeling diode chip) through a specific circuit bridge; the packaged IGBT module is directly used in frequency converters, UPS uninterrupted power supply and other equipment. IGBT modules have the characteristics of energy saving, convenient installation and maintenance, and stable heat dissipation. The IGBT module is the core device for energy conversion and transmission, commonly known as the "CPU" of power electronic devices. As a national strategic emerging industry, it is widely used in rail transit, smart grid, aerospace, electric vehicles and new energy equipment.