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FF450R17ME4PB11BOSA1

FF450R17ME4PB11BOSA1

FF450R17ME4PB11BOSA1

Infineon Technologies

FF450R17ME4PB11BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FF450R17ME4PB11BOSA1 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~150°C
Published 2002
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 11
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUFM-X11
Number of Elements 2
Configuration 2 Independent
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 3mA
Voltage - Collector Emitter Breakdown (Max) 1700V
Current - Collector (Ic) (Max) 450A
Turn On Time 380 ns
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 450A
Turn Off Time-Nom (toff) 1600 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 36nF @ 25V
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
6 $245.81667 $1474.90002
FF450R17ME4PB11BOSA1 Product Details

FF450R17ME4PB11BOSA1 Description

 

FF450R17ME4PB11BOSA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FF450R17ME4PB11BOSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

 

 

FF450R17ME4PB11BOSA1 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

FF450R17ME4PB11BOSA1 Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display

 


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