IXYN82N120C3

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Manufacturer part number:IXYN82N120C3

Manufacturer:IXYS

Description:IGBT MOD 1200V 105A 500W SOT227B

Case Package:SOT-23

Datasheet:IXYN82N120C3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Chassis Mount, Surface Mount
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Published	2011
Series	XPT™, GenX3™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Additional Feature	AVALANCHE RATED, UL RECOGNIZED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	500W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	4
Number of Elements	1
Configuration	Single
Power Dissipation	600W
Case Connection	ISOLATED
Turn On Delay Time	29 ns
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Turn-Off Delay Time	192 ns
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	120A
Current - Collector Cutoff (Max)	25μA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	105A
Collector Emitter Saturation Voltage	2.75V
Input Capacitance	4.1nF
Turn On Time	119 ns
Vce(on) (Max) @ Vge, Ic	3.2V @ 15V, 82A
Turn Off Time-Nom (toff)	295 ns
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	4.1nF @ 25V
Height	9.6mm
Length	38.23mm
Width	25.07mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free