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IRG5K75HF12A

IRG5K75HF12A

IRG5K75HF12A

Infineon Technologies

IRG5K75HF12A datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

IRG5K75HF12A Datasheet

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Specifications
Name Value
Type Parameter
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case POWIR® 34 Module
Operating Temperature -40°C~150°C TJ
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 540W
Configuration Half Bridge
Power - Max 540W
Input Standard
Collector Emitter Voltage (VCEO) 2.6V
Max Collector Current 150A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 9.5nF
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 75A
NTC Thermistor No
Input Capacitance (Cies) @ Vce 9.5nF @ 25V
RoHS Status RoHS Compliant
IRG5K75HF12A Product Details

IRG5K75HF12A Description


The IRG5K75HF12A is a 1200V 75A Fast IGBT Half-Bridge module packaged in POWIR 34 package. The abbreviated version of an insulated-gate bipolar transistor is IGBT, which is a power semiconductor die.

A grouping of numerous IGBT power semiconductor dies in one physical package is known as an IGBT power module. A certain electrical arrangement, such as a half-bridge, three levels, dual, chopper, booster, etc., is typically used to connect the dies.



IRG5K75HF12A Features


  • High power density.

  • Lower switching losses.

  • Lower conduction losses.

  • 650V breakdown voltage.

  • No short circuit capability.

  • Housed in 12 mm low profile and low stray inductance packages.



IRG5K75HF12A Applications


  • Home appliances

  • Industrial motors

  • Automotive

  • Motor controllers


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