IRG5K75HF12A datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
IRG5K75HF12A Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
POWIR® 34 Module
Operating Temperature
-40°C~150°C TJ
Published
2014
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
540W
Configuration
Half Bridge
Power - Max
540W
Input
Standard
Collector Emitter Voltage (VCEO)
2.6V
Max Collector Current
150A
Current - Collector Cutoff (Max)
1mA
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Input Capacitance
9.5nF
Vce(on) (Max) @ Vge, Ic
2.6V @ 15V, 75A
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
9.5nF @ 25V
RoHS Status
RoHS Compliant
IRG5K75HF12A Product Details
IRG5K75HF12A Description
The IRG5K75HF12A is a 1200V 75A Fast IGBT Half-Bridge module packaged in POWIR 34 package. The abbreviated version of an insulated-gate bipolar transistor is IGBT, which is a power semiconductor die.
A grouping of numerous IGBT power semiconductor dies in one physical package is known as an IGBT power module. A certain electrical arrangement, such as a half-bridge, three levels, dual, chopper, booster, etc., is typically used to connect the dies.
IRG5K75HF12A Features
High power density.
Lower switching losses.
Lower conduction losses.
650V breakdown voltage.
No short circuit capability.
Housed in 12 mm low profile and low stray inductance packages.