MIEB100W1200TEH

new-10%

Manufacturer part number:MIEB100W1200TEH

Manufacturer:IXYS

Description:IGBT MODULE 1200V 183A 630W E3

Case Package:SOT-23

Datasheet:MIEB100W1200TEH Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	E3
Transistor Element Material	SILICON
Operating Temperature	-40°C~125°C TJ
Packaging	Bulk
Published	2010
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	35
Additional Feature	UL RECOGNIZED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	630W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
JESD-30 Code	R-XUFM-X35
Number of Elements	6
Configuration	Three Phase Inverter
Case Connection	ISOLATED
Power - Max	630W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	2.2V
Max Collector Current	183A
Current - Collector Cutoff (Max)	300μA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	7.43nF
Turn On Time	175 ns
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 100A
Turn Off Time-Nom (toff)	700 ns
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	7.43nF @ 25V
RoHS Status	ROHS3 Compliant