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FD800R17HP4KB2BOSA2

FD800R17HP4KB2BOSA2

FD800R17HP4KB2BOSA2

Infineon Technologies

FD800R17HP4KB2BOSA2 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FD800R17HP4KB2BOSA2 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 24 Weeks
Mounting Type Chassis Mount
Package / Case Module
Operating Temperature -40°C~150°C
Published 2002
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Configuration Single Chopper
Power - Max 5200W
Halogen Free Not Halogen Free
Input Standard
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1700V
Current - Collector (Ic) (Max) 800A
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 800A
NTC Thermistor No
Input Capacitance (Cies) @ Vce 65nF @ 25V
RoHS Status RoHS Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1,032.914316 $1
10 $998.950015 $9989.50015
25 $992.005973 $24800.149325
50 $985.110202 $49255.5101
100 $964.848386 $96484.8386
500 $895.866653 $447933.3265
FD800R17HP4KB2BOSA2 Product Details

FD800R17HP4KB2BOSA2                  Description

 

IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.

 


FD800R17HP4KB2BOSA2                  Features

? Single switch

? Including fast free-wheeling diodes

? Package with insulated metal base plate

 


FD800R17HP4KB2BOSA2                   Applications

·High power converters

·Motor drives

·Solar applications

·UPS systems


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