FP25R12KT4B15BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FP25R12KT4B15BOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
24
ECCN Code
EAR99
Additional Feature
UL APPROVED
Max Power Dissipation
160W
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-XUFM-X24
Number of Elements
7
Configuration
Three Phase Inverter
Case Connection
ISOLATED
Transistor Application
POWER CONTROL
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
1.2kV
Current - Collector Cutoff (Max)
1mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
25A
Collector Emitter Saturation Voltage
1.85V
Turn On Time
210 ns
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 25A
Turn Off Time-Nom (toff)
620 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
1.45nF @ 25V
RoHS Status
RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10
$64.44700
$644.47
FP25R12KT4B15BOSA1 Product Details
FP25R12KT4B15BOSA1 Description
The FP25R12KT4B15BOSA1 is an EconoPIM?2 1200 V, 25 A three-phase IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and NTC (alternative mechanically compatible to an IGBT3 module).
FP25R12KT4B15BOSA1 Features
Low Switching Losses
Low VCEsat
T vj op = 150°C
VCEsat with a positive Temperature Coefficient
High Power and Thermal Cycling Capability
Copper Base Plate
Solder Contact Technology
Standard Housing
FP25R12KT4B15BOSA1 Applications
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