APT50GF120JRDQ3

new-10%

Manufacturer part number:APT50GF120JRDQ3

Manufacturer:Microsemi Corporation

Description:IGBT MOD 1200V 120A 521W ISOTOP

Case Package:SOT-23

Datasheet:APT50GF120JRDQ3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	29 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	ISOTOP
Number of Pins	4
Weight	30.000004g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Published	1999
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Voltage - Rated DC	1.2kV
Max Power Dissipation	521W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Current Rating	75A
Pin Count	4
Number of Elements	1
Configuration	Single
Case Connection	ISOLATED
Power - Max	521W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	120A
Current - Collector Cutoff (Max)	750μA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	2.5V
Input Capacitance	5.32nF
Turn On Time	106 ns
Vce(on) (Max) @ Vge, Ic	3V @ 15V, 75A
Turn Off Time-Nom (toff)	520 ns
IGBT Type	NPT
NTC Thermistor	No
Input Capacitance (Cies) @ Vce	5.32nF @ 25V
Height	9.6mm
Length	38.2mm
Width	25.4mm
RoHS Status	RoHS Compliant
Lead Free	Lead Free