FF1400R17IP4PBOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FF1400R17IP4PBOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
50 Weeks
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2007
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
12
ECCN Code
EAR99
Additional Feature
UL APPROVED
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PUFM-X12
Number of Elements
2
Configuration
2 Independent
Element Configuration
Dual
Case Connection
ISOLATED
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
1.7kV
Max Collector Current
1.4kA
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1700V
Current - Collector (Ic) (Max)
1400A
Turn On Time
1030 ns
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 1400A
Turn Off Time-Nom (toff)
2190 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
110nF @ 25V
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3
$885.86000
$2657.58
FF1400R17IP4PBOSA1 Product Details
FF1400R17IP4PBOSA1 Description
IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.
FF1400R17IP4PBOSA1 Applications
High power converters
Motor drives
Wind turbines
Electrical Features
High short-circuit capabilityHigh surge current capability