FZ2400R12HP4HOSA2 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FZ2400R12HP4HOSA2 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
50 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
7
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-XUFM-X7
Number of Elements
2
Configuration
Single Switch
Case Connection
ISOLATED
Power - Max
12500W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
3460A
Turn On Time
880 ns
Vce(on) (Max) @ Vge, Ic
2.05V @ 15V, 2400A
Turn Off Time-Nom (toff)
1440 ns
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
150nF @ 25V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2
$814.91500
$1629.83
FZ2400R12HP4HOSA2 Product Details
FZ2400R12HP4HOSA2 Description
FZ2400R12HP4HOSA2 is a 1200v IHM-B module with soft-switching Trench-IGBT4. The transistor FZ2400R12HP4HOSA2 can be applied in high-power converters, motor drives, and wind turbine applications due to the following features. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor FZ2400R12HP4HOSA2 is in the Tray package with 3460A continuous DC collector current.