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FP75R12KT3BOSA1

FP75R12KT3BOSA1

FP75R12KT3BOSA1

Infineon Technologies

FP75R12KT3BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FP75R12KT3BOSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Number of Pins 24
Transistor Element Material SILICON
Operating Temperature -40°C~125°C
Published 2014
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 35
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
T[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 35
JESD-30 Code R-XUFM-X35
Qualification Status Not Qualified
Number of Elements 7
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 355W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 105A
Turn On Time 340 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 75A
Turn Off Time-Nom (toff) 610 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 5.3nF @ 25V
RoHS Status RoHS Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $190.194300 $190.1943
10 $179.428585 $1794.28585
100 $169.272250 $16927.225
500 $159.690802 $79845.401
1000 $150.651700 $150651.7
FP75R12KT3BOSA1 Product Details

FP75R12KT3BOSA1 Description


FP75R12KT3BOSA1 is a 1200v IGBT-module. The FP75R12KT3BOSA1 can be applied in Communications equipment, Datacom modules, Industrial, Appliances, Personal electronics, and PC & notebook applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FP75R12KT3BOSA1 is in the tray package with 355W Power dissipations.



FP75R12KT3BOSA1 Features


Collector-emitter voltage Tvj = 25°C: 1200v

Continuous DC collector current TC = 25°C : 105A

Repetitive peak collector current Tp = 1 ms: 150A

Total power dissipation Tc = 25°C: 355W

Gate-emitter peak voltage: ±20V



FP75R12KT3BOSA1 Applications


Communications equipment 

Datacom module 

Industrial 

Appliances 

Personal electronics 

PC & notebooks


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