FP75R12KT3BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FP75R12KT3BOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Number of Pins
24
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Published
2014
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
35
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
T[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
35
JESD-30 Code
R-XUFM-X35
Qualification Status
Not Qualified
Number of Elements
7
Configuration
Three Phase Inverter
Case Connection
ISOLATED
Power - Max
355W
Transistor Application
POWER CONTROL
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
1mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
105A
Turn On Time
340 ns
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 75A
Turn Off Time-Nom (toff)
610 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
5.3nF @ 25V
RoHS Status
RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$190.194300
$190.1943
10
$179.428585
$1794.28585
100
$169.272250
$16927.225
500
$159.690802
$79845.401
1000
$150.651700
$150651.7
FP75R12KT3BOSA1 Product Details
FP75R12KT3BOSA1 Description
FP75R12KT3BOSA1 is a 1200v IGBT-module. The FP75R12KT3BOSA1 can be applied in Communications equipment, Datacom modules, Industrial, Appliances, Personal electronics, and PC & notebook applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FP75R12KT3BOSA1 is in the tray package with 355W Power dissipations.