FF900R12IE4VPBOSA1                         Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO?247?4L package that provides significant reduction in Eon Losses compared to standard TO?247?3L package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co?packaged free wheeling diode with a low forward voltage.

FF900R12IE4VPBOSA1                         Applications

Commercial Agriculture Vehicles·Traction drives

FF900R12IE4VPBOSA1                         Features

·High short-circuit capability

·High surge current capability

·High current density

·Low switching losses

·Tjop=150℃

·VCEsat with positivetemperature coefficient

Mechanical Features

·4kVAC 1mininsulation

·Package with CTI>400

·High creepage and clearance distances

·High mechanical robustness

·Integrated NTC temperature sensor

·RoHS compliant

·Pre-applied Thermal Interface Material