FP75R07N2E4BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FP75R07N2E4BOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
31
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
31
JESD-30 Code
R-XUFM-X31
Number of Elements
7
Configuration
Three Phase Inverter
Case Connection
ISOLATED
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
1mA
Voltage - Collector Emitter Breakdown (Max)
650V
Current - Collector (Ic) (Max)
95A
Turn On Time
45 ns
Vce(on) (Max) @ Vge, Ic
1.95V @ 15V, 75A
Turn Off Time-Nom (toff)
320 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
4.6nF @ 25V
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$89.040115
$89.040115
10
$84.000108
$840.00108
100
$79.245385
$7924.5385
500
$74.759797
$37379.8985
1000
$70.528111
$70528.111
FP75R07N2E4BOSA1 Product Details
FP75R07N2E4BOSA1 Description
The FP75R07N2E4BOSA1 is an EconoPIM?2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 3 diode and NTC. Power may be turned on and off quickly and with excellent energy efficiency using an IGBT power module, which serves as a switch. Due to its capacity to improve switching, temperature, weight, and cost performance, IGBT power modules are increasingly being used as the preferred technology for high-power applications.