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FF150R12KS4HOSA1

FF150R12KS4HOSA1

FF150R12KS4HOSA1

Infineon Technologies

FF150R12KS4HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FF150R12KS4HOSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 99 Weeks
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~125°C
Published 2002
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
ECCN Code EAR99
Additional Feature FAST
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 7
JESD-30 Code R-XUFM-X7
Number of Elements 2
Configuration 2 Independent
Element Configuration Dual
Case Connection ISOLATED
Power - Max 1250W
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 225A
Turn On Time 180 ns
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 150A
Turn Off Time-Nom (toff) 590 ns
NTC Thermistor No
Input Capacitance (Cies) @ Vce 11nF @ 25V
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
10 $100.20200 $1002.02
FF150R12KS4HOSA1 Product Details

FF150R12KS4HOSA1 Description


FF150R12KS4HOSA1 is a single IGBT with a Collector Emitter Breakdown Voltage of 600V from Infineon Technologies. FF150R12KS4HOSA1 operates between -40°C~175°C, and its Current - Collector (Ic) (Max) is 80A. The FF150R12KS4HOSA1 has 3 pins and it is available in Tube packaging way. FF150R12KS4HOSA1 has a 600V Voltage - Collector Emitter Breakdown (Max) value.



FF150R12KS4HOSA1 Features


  • Package with CTI>400

  • High Creepage and Clearance Distances

  • Isolated Base Plate

  • Copper Base Plate

  • Standard Housing



FF150R12KS4HOSA1 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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