FF150R12KS4HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FF150R12KS4HOSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
99 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Published
2002
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
7
ECCN Code
EAR99
Additional Feature
FAST
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
7
JESD-30 Code
R-XUFM-X7
Number of Elements
2
Configuration
2 Independent
Element Configuration
Dual
Case Connection
ISOLATED
Power - Max
1250W
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
225A
Turn On Time
180 ns
Vce(on) (Max) @ Vge, Ic
3.7V @ 15V, 150A
Turn Off Time-Nom (toff)
590 ns
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
11nF @ 25V
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10
$100.20200
$1002.02
FF150R12KS4HOSA1 Product Details
FF150R12KS4HOSA1 Description
FF150R12KS4HOSA1 is a single IGBT with a Collector Emitter Breakdown Voltage of 600V from Infineon Technologies. FF150R12KS4HOSA1 operates between -40°C~175°C, and its Current - Collector (Ic) (Max) is 80A. The FF150R12KS4HOSA1 has 3 pins and it is available in Tube packaging way. FF150R12KS4HOSA1 has a 600V Voltage - Collector Emitter Breakdown (Max) value.